Image


HIP6601BCBZ

Power management

    Renesas Electronics America IncBrandedHIP6601BCBZIntegrated circuit electronic chips use1Encapsulated, with a working temperature range of0°C ~ 125°C（TJ）,The voltage is10.8V ~ 13.2V,use8-SOIC（0.154"，3.90mm 宽）Packaging technology，nowHIP6601BCBZChip inventory is11733individual。
---
 
Power management

HIP6601BCBZ
查看电源型号为HIP6601BCBZ，品牌为Renesas的大图  
 
HIP6601BCBZ     There is sufficient supply and supply is ongoing...
Chip Information    
Model   HIP6601BCBZ
Brand   Renesas
Manufacturer   Renesas Electronics America Inc
PDF   Viewing PDF files
Inventory quantity   11733
 Inquiry Now
Characteristic    
Minqty   1
Series   IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging and Encapsulation   8-SOIC（0.154"，3.90mm 宽）
Supply Voltage   10.8V ~ 13.2V
Operation Temperature   0°C ~ 125°C（TJ）
Describe  
 
 
 
  •               Previous article
    HIP6601BCBZA
    Renesas Electronics America Inc
  •               Next article
    ISL89410IPZ
    Renesas Electronics America Inc
    •  
     
    BRAND
     
  •  
    Texas Instruments
    1
     
     
  •  
    XILINX
    2
     
     
  •  
    Silicon Labs
    3
     
     
  •  
    Maxim
    4
     
     
  •  
    NXP Semiconductors
    5
     
     
  •  
    Analog Devices Inc
    6
     
     
  •  
    Microchip
    7
     
     
  •  
    ALTERA
    8
     
     
  •  
    ON Semiconductor
    9
     
     
  •  
    STMicroelectronics
    10
     
     
    •  
    CopyRight 2023 © Shenzhen Victorystar Technology Co., Ltd. All Right Reserved Yue ICP Preparation No. 2022071625
    Address: 1809, Block A, Jiahe Building, Zhonghang Road, Futian District, Shenzhen Zip code: 518000 Company Tel.: (86) 0755-88896989 Fax: 0755-83868885
    Copyright Shenzhen Victorystar Technology Co., Ltd

    Copyright Shenzhen Victorystar Technology Co., Ltd