Image


HIP6603BECBZ

Power management

    Renesas Electronics America IncBrandedHIP6603BECBZIntegrated circuit electronic chips use1Encapsulated, with a working temperature range of0°C ~ 125°C(TJ),The voltage is10.8V ~ 13.2V,use8-SOIC(0.154",3.90mm 宽)裸露焊盘Packaging technology,nowHIP6603BECBZChip inventory is11270individual。
---
 
Power management

HIP6603BECBZ

查看电源型号为HIP6603BECBZ,品牌为Renesas的大图  
 
HIP6603BECBZ     There is sufficient supply and supply is ongoing...
Chip Information    
Model   HIP6603BECBZ
Brand   Renesas
Manufacturer   Renesas Electronics America Inc
PDF   Viewing PDF files
Inventory quantity   11270
 Inquiry Now
Characteristic    
Minqty   1
Series   IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging and Encapsulation   8-SOIC(0.154",3.90mm 宽)裸露焊盘
Supply Voltage   10.8V ~ 13.2V
Operation Temperature   0°C ~ 125°C(TJ)
Describe  
 
 
 
  •               Previous article
    MIC4467ZWM-TR
    Microchip Technology
  •               Next article
    MCP14A0154T-E&MS
    Microchip Technology
  •  
     
    BRAND
     
  •  
    Silicon Labs
    1
     
     
  •  
    Analog Devices Inc
    2
     
     
  •  
    BROADCOM
    3
     
     
  •  
    XILINX
    4
     
     
  •  
    Texas Instruments
    5
     
     
  •  
    Microchip
    6
     
     
  •  
    ON Semiconductor
    7
     
     
  •  
    STMicroelectronics
    8
     
     
  •  
    NXP Semiconductors
    9
     
     
  •  
    ALTERA
    10
     
     
  •  
    CopyRight 2023 © Shenzhen Victorystar Technology Co., Ltd. All Right Reserved Yue ICP Preparation No. 2022071625
    Address: 1809, Block A, Jiahe Building, Zhonghang Road, Futian District, Shenzhen Zip code: 518000 Company Tel.: (86) 0755-88896989 Fax: 0755-83868885
    Copyright Shenzhen Victorystar Technology Co., Ltd

    Copyright Shenzhen Victorystar Technology Co., Ltd