Image


HIP6601BECBZA

Power management

    Renesas Electronics America IncBrandedHIP6601BECBZAIntegrated circuit electronic chips use1Encapsulated, with a working temperature range of0°C ~ 125°C(TJ),The voltage is10.8V ~ 13.2V,use8-SOIC(0.154",3.90mm 宽)裸露焊盘Packaging technology,nowHIP6601BECBZAChip inventory is19141individual。
---
 
Power management

HIP6601BECBZA

查看电源型号为HIP6601BECBZA,品牌为Renesas的大图  
 
HIP6601BECBZA     There is sufficient supply and supply is ongoing...
Chip Information    
Model   HIP6601BECBZA
Brand   Renesas
Manufacturer   Renesas Electronics America Inc
PDF   Viewing PDF files
Inventory quantity   19141
 Inquiry Now
Characteristic    
Minqty   1
Series   IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging and Encapsulation   8-SOIC(0.154",3.90mm 宽)裸露焊盘
Supply Voltage   10.8V ~ 13.2V
Operation Temperature   0°C ~ 125°C(TJ)
Describe  
 
 
 
  •               Previous article
    IR2301PBF
    Infineon Technologies
  •               Next article
    LTC4444HMS8E&PBF
    Analog Devices Inc.
  •  
     
    BRAND
     
  •  
    XILINX
    1
     
     
  •  
    Analog Devices Inc
    2
     
     
  •  
    ALTERA
    3
     
     
  •  
    STMicroelectronics
    4
     
     
  •  
    BROADCOM
    5
     
     
  •  
    Texas Instruments
    6
     
     
  •  
    Maxim
    7
     
     
  •  
    NXP Semiconductors
    8
     
     
  •  
    Silicon Labs
    9
     
     
  •  
    Microchip
    10
     
     
  •  
    CopyRight 2023 © Shenzhen Victorystar Technology Co., Ltd. All Right Reserved Yue ICP Preparation No. 2022071625
    Address: 1809, Block A, Jiahe Building, Zhonghang Road, Futian District, Shenzhen Zip code: 518000 Company Tel.: (86) 0755-88896989 Fax: 0755-83868885
    Copyright Shenzhen Victorystar Technology Co., Ltd

    Copyright Shenzhen Victorystar Technology Co., Ltd