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HIP6601BECBZ-T

Power management

    Renesas Electronics America IncBrandedHIP6601BECBZ-TIntegrated circuit electronic chips use1Encapsulated, with a working temperature range of0°C ~ 125°C（TJ）,The voltage is10.8V ~ 13.2V,use8-SOIC（0.154"，3.90mm 宽）裸露焊盘Packaging technology，nowHIP6601BECBZ-TChip inventory is17463individual。
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Power management

HIP6601BECBZ-T
查看电源型号为HIP6601BECBZ-T，品牌为Renesas的大图  
 
HIP6601BECBZ-T     There is sufficient supply and supply is ongoing...
Chip Information    
Model   HIP6601BECBZ-T
Brand   Renesas
Manufacturer   Renesas Electronics America Inc
PDF   Viewing PDF files
Inventory quantity   17463
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Characteristic    
Minqty   1
Series   IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging and Encapsulation   8-SOIC（0.154"，3.90mm 宽）裸露焊盘
Supply Voltage   10.8V ~ 13.2V
Operation Temperature   0°C ~ 125°C（TJ）
Describe  
 
 
 
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