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HIP6601BECBZ

Power management

    Renesas Electronics America IncBrandedHIP6601BECBZIntegrated circuit electronic chips use1Encapsulated, with a working temperature range of0°C ~ 125°C（TJ）,The voltage is10.8V ~ 13.2V,use8-SOIC（0.154"，3.90mm 宽）裸露焊盘Packaging technology，nowHIP6601BECBZChip inventory is15339individual。
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Power management

HIP6601BECBZ
查看电源型号为HIP6601BECBZ，品牌为Renesas的大图  
 
HIP6601BECBZ     There is sufficient supply and supply is ongoing...
Chip Information    
Model   HIP6601BECBZ
Brand   Renesas
Manufacturer   Renesas Electronics America Inc
PDF   Viewing PDF files
Inventory quantity   15339
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Characteristic    
Minqty   1
Series   IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging and Encapsulation   8-SOIC（0.154"，3.90mm 宽）裸露焊盘
Supply Voltage   10.8V ~ 13.2V
Operation Temperature   0°C ~ 125°C（TJ）
Describe  
 
 
 
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